Memoria Flash Microchip SST25VF016B 16M SPI 8SOIC

Memoria Flash Microchip SST25VF016B 16M SPI 8SOIC
Memoria Flash Microchip SST25VF016B 16M SPI 8SOIC
Memoria Flash Microchip SST25VF016B 16M SPI 8SOIC
Memoria Flash Microchip SST25VF016B 16M SPI 8SOIC
Memoria Flash Microchip SST25VF016B 16M SPI 8SOIC
Memoria Flash Microchip SST25VF016B 16M SPI 8SOIC
Memoria Flash Microchip SST25VF016B 16M SPI 8SOIC
 
Precio$15,000
CódigoSST25VF016B
UbicaciónBogota
Stock: 5
SKUSKU0207
Local0A-05-04 No hay comentarios
 
Memoria Flash Microchip SST25VF016B 16M SPI 8SOIC


Memoria Flash Microchip SST25VF016B 16M SPI 8SOIC


Memoria Flash Microchip SST25VF016B 16M SPI 8SOIC

Memoria Flash Microchip SST25VFO16B 16M SPI



Memoria Flash Microchip SST25VF016B 16M SPI 8SOIC

Memoria Flash Microchip SST25VFO16B 16M SPI



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Features Ver Hoja Técnica.

- Single Voltage Read and Write Operations 2.7-3.6V
- Serial Interface Architecture
  SPI Compatible: Mode 0 and Mode 3
- High Speed Clock Frequency
 Up to 80 MHz
- Superior Reliability
  Endurance: 100,000 Cycles (typical)
  Greater than 100 years Data Retention
- Low Power Consumption:
  Active Read Current: 10 mA (typical)
  Standby Current: 5  (typical)
- Flexible Erase Capability
  Uniform 4 KByte sectors
  Uniform 32 KByte overlay blocks
  Uniform 64 KByte overlay blocks
- Fast Erase and Byte-Program:
  Chip-Erase Time: 35 ms (typical)
  Sector-/Block-Erase Time: 18 ms (typical)
  Byte-Program Time: 7s (typical)

Description

SSTs 25 series Serial Flash family features a four-wire, SPI-compatible interface that allows for a low pin-count package which occupies less board space and ultimately lowers total system costs. The SST25VF016B devices are enhanced with improved operating frequency and even lower power consumption than the original SST25VFxxxA devices. SST25VF016B SPI serial flash memories are manufactured with SSTs proprietary, high-performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST25VF016B devices significantly improve performance and reliability, while lowering power consumption. The devices write (Program or Erase) with a single power supply of 2.7-3.6V for SST25VF016B. The total energy consumed is a function of the applied voltage, current, and time of application. Since for any given voltage range, the SuperFlash technology uses less current to program and has a shorter erase time, the total energy consumed during any Erase or Program operation is less than alternative flash memory technologies. The SST25VF016B device is offered in both 8-lead SOIC (200 mils) and 8-contact WSON (6mm x 5mm) packages. See Figure 2 for pin assignments.

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